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K4T1G164QE-HCE7 +BOM

K4T1G164QE-HCE7 Samsung

Key Features

JEDEC standard VDD= 1.8V0.1V Power Supply

VDDQ= 1.8V0.1V

333MHz fCKfor 667Mb/sec/pin, 400MHz fCKfor 800Mb/sec/pin

8 Banks

Posted CAS

Programmable CASLatency: 3, 4, 5, 6

Programmable Additive Latenc y: 0, 1, 2, 3, 4, 5

Write Latency(WL) = Read Latency(RL) -1

Burst Length: 4 , 8(Interleave/nibble sequential)

Programmable Sequential / Interleave Burst Mode

Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)

Off-Chip Driver(OCD) Impedance Adjustment

On Die Termination

Special Function Support

- 50ohm ODT

- High Temperature Self-Refresh rate enable

Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at 85C < TCASE <95 C

All of products are Lead-Free, Halogen-Free, and RoHS compliant

Application

The 1Gb DDR2 SDRAM is organized asa 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications.

Specifications

ECCN (US) EAR99 Part Status Obsolete
HTS 8542.39.00.01 Automotive No
PPAP No Type Motor Driver
Motor Type Stepper Motor Process Technology CMOS
Control Interface INx/Enx Output Configuration Full Bridge
Output Voltage (V) 60(Max) Maximum Peak Output Current (A) 5
Minimum Operating Supply Voltage (V) 12 Operating Supply Voltage (V) 12 to 48
Typical Operating Supply Voltage (V) 36 Maximum Operating Supply Voltage (V) 48
Maximum Operating Current (mA) 15 Maximum Power Dissipation (mW) 2300
Minimum Operating Temperature (°C) -40 Maximum Operating Temperature (°C) 150
Packaging Tube Mounting Through Hole
PCB changed 11 Tab Tab
Pin Count 11 Lead Shape Formed

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