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K4T51163QG-HCF7 +BOM

DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84

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K4T51163QG-HCF7

Key Features

  • JEDEC standard VDD = 1.8V ± 0.1V Power Supply
  • VDDQ = 1.8V ± 0.1V
  • 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin, 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin
  • 4 Banks
  • Posted CAS
  • Programmable CAS Latency: 3, 4, 5, 6
  • Programmable Additive Latency: 0, 1 , 2 , 3, 4 , 5
  • Write Latency(WL) = Read Latency(RL) -1
  • Burst Length: 4 , 8(Interleave/Nibble sequential)
  • Programmable Sequential / Interleave Burst Mode
  • Bi-directional Differential Data-Strobe (Single-ended data strobe is an optional feature)
  • Off-Chip Driver(OCD) Impedance Adjustment
  • On Die Termination
  • Special Function Support
  • -50ohm ODT
  • -High Temperature Self-Refresh rate enable
  • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C
  • All of products are Lead-Free, Halogen-Free, and RoHS compliant

Specifications

Part Life Cycle Code Obsolete Reach Compliance Code
ECCN Code EAR99 HTS Code 8542.32.00.28
Access Time-Max 0.4 ns Clock Frequency-Max (fCLK) 400 MHz
I/O Type COMMON Interleaved Burst Length 4,8
JESD-30 Code R-PBGA-B84 JESD-609 Code e1
Memory Density 536870912 bit Memory IC Type DDR2 DRAM
Memory Width 16 Moisture Sensitivity Level 3
Number of Terminals 84 Number of Words 33554432 words
Number of Words Code 32000000 Operating Temperature-Max 95 °C
Operating Temperature-Min Organization 32MX16
Output Characteristics 3-STATE Peak Reflow Temperature (Cel) 260
Power Supplies 1.8 V Qualification Status Not Qualified
Refresh Cycles 8192 Sequential Burst Length 4,8
Standby Current-Max 0.008 A Supply Current-Max 0.275 mA
Supply Voltage-Nom (Vsup) 1.8 V Surface Mount YES
Technology CMOS Temperature Grade OTHER
Terminal Finish Tin/Silver/Copper (Sn97.0Ag2.5Cu0.5) Terminal Form BALL
Terminal Pitch 0.8 mm Terminal Position BOTTOM

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