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K4T51163QJ-BCE6 +BOM

DRAM Chip DDR2 SDRAM 512M-Bit 32Mx16 1.8V 84-Pin FBGA

email Email: [email protected]
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tel Tel: +852 95804164
K4T51163QJ-BCE6

Key Features

  • JEDEC standard 1.8V ± 0.1V Power Supply
  • VDDQ = 1.8V ± 0.1V
  • 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin, 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin
  • 4 Banks
  • Posted CAS
  • Programmable CAS Latency: 3, 4, 5, 6
  • Programmable Additive Latency: 0, 1 , 2 , 3, 4 , 5
  • Write Latency(WL) = Read Latency(RL) -1
  • Burst Length: 4 , 8(Interleave/nibble sequential)
  • Programmable Sequential / Interleave Burst Mode
  • Bi-directional Differential Data-Strobe (Single-ended data strobe is an optional feature)
  • Off-Chip Driver(OCD) Impedance Adjustment
  • On Die Termination
  • Special Function Support
  • -PASR(Partial Array Self Refresh)
  • -50ohm ODT
  • -High Temperature Self-Refresh rate enable
  • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C
  • All of Lead-free products are compliant for RoHS

Specifications

Product Category IC Chips

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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