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K6X1008C2D-TF55 +BOM

128K X 8 BIT LOW POWER FULL CMOS STATIC RAM

Manufacturer:

Samsung Semiconductor, Inc.
Mfr.Part #:

K6X1008C2D-TF55
Datasheet:

K6X1008C2D-TF55 Datasheet (PDF)
Packaging:

Tray
Programmable:

Not Verified
Memory Type:

Volatile
Memory Format:

SRAM
EDA/CAD Models:

Request Free CAD Models for K6X1008C2D-TF55

K6X1008C2D-TF55 General Description

With its 4-bank architecture and burst mode support, the K6X1008C2D-TF55 ensures high-speed data transfer without compromising on reliability. Its flexible burst length options of 1, 2, 4, 8, and full page allow for seamless data access, while its low CAS latency of 2 guarantees optimal performance. Plus, with support for Programmable CAS Write Latency (1/1.5/2), you can customize your memory settings to suit your specific needs

Key Features

Fast and reliable memory solution
High-speed static RAM for industrial use
Low power consumption for energy efficiency
Organized as 128K words by 8 bits architecture
High-reliability CMOS static RAM module
5V operating voltage with fast access time

Application

High-capacity memory chip
Advanced automotive electronics
Reliable performance guaranteed

Specifications

Packaging	Tray	Part Status	Obsolete
Programmable	Not Verified	Memory Type	Volatile
Memory Format	SRAM	Technology	SRAM - Asynchronous
Memory Size	1Mbit	Memory Organization	128K x 8
Memory Interface	Parallel	Write Cycle Time - Word, Page	55ns
Voltage - Supply	4.5V ~ 5.5V	Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount