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Featuring a 256KX16 capacity and 70ns speed, this SRAM chip utilizes CMOS technology and comes in a small PDSO44 package
Manufacturer:
Samsung Semiconductor
Mfr.Part #:
K6X4016T3F-TF70
Datasheet:
Part Life Cycle Code:
Obsolete
Pin Count:
44
ECCN Code:
3A991.B.2.A
HTS Code:
8542.32.00.41
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The K6X4016T3F-TF70 by Samsung stands out as a top-tier synchronous dynamic random-access memory (SDRAM) chip in the tech market. Boasting an impressive capacity of 16 megabits, this memory chip operates at a lightning-speed of 70 nanoseconds. Its versatility makes it a popular choice for a wide range of electronic devices, where fast and efficient data storage and retrieval are paramount
Part Life Cycle Code | Obsolete | Pin Count | 44 |
ECCN Code | 3A991.B.2.A | HTS Code | 8542.32.00.41 |
Access Time-Max | 70 ns | I/O Type | COMMON |
JESD-30 Code | R-PDSO-G44 | JESD-609 Code | e0 |
Length | 18.41 mm | Memory Density | 4194304 bit |
Memory IC Type | STANDARD SRAM | Memory Width | 16 |
Moisture Sensitivity Level | 1 | Number of Functions | 1 |
Number of Terminals | 44 | Number of Words | 262144 words |
Number of Words Code | 256000 | Operating Mode | ASYNCHRONOUS |
Operating Temperature-Max | 85 °C | Operating Temperature-Min | -40 °C |
Organization | 256KX16 | Output Characteristics | 3-STATE |
Parallel/Serial | PARALLEL | Peak Reflow Temperature (Cel) | 260 |
Qualification Status | Not Qualified | Seated Height-Max | 1.2 mm |
Standby Current-Max | 0.0003 A | Standby Voltage-Min | 2.7 V |
Supply Current-Max | 0.025 mA | Supply Voltage-Max (Vsup) | 3.6 V |
Supply Voltage-Min (Vsup) | 2.7 V | Supply Voltage-Nom (Vsup) | 3.3 V |
Surface Mount | YES | Technology | CMOS |
Temperature Grade | INDUSTRIAL | Terminal Finish | TIN LEAD |
Terminal Form | GULL WING | Terminal Pitch | 0.8 mm |
Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | 40 |
Width | 10.16 mm |
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