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MAT14ARZ +BOM

Matched Monolithic Quad Transistor

MAT14ARZ General Description

Built to meet stringent specifications, each transistor in the MAT14ARZ is individually tested to ensure optimal performance. The device boasts a maximum noise level of 3 nV/√Hz at 100 Hz with a collector current of 1 mA, along with a typical offset voltage of 100 μV. Additionally, the dual transistor combinations are thoroughly verified for matching parameters such as offset voltage, input offset current, and gain match, ensuring superior accuracy and stability in circuit operation

Key Features

  • Precise Amplifier Operation
  • High-Speed Data Transmission
  • Low Power Consumption Guaranteed
  • Ultra-High Current Sensitivity
  • Superior Thermal Performance Achieved
  • Excellent Signal Integrity Maintained

Application

  • Low frequency signal amplifiers
  • High resolution digital potentiometers

Specifications

Source Content uid MAT14ARZ Pbfree Code No
Part Life Cycle Code Active Pin Count 14
Reach Compliance Code compliant ECCN Code EAR99
HTS Code 8541.21.00.95 Additional Feature LOW NOISE
Application AMPLIFIER Configuration COMPLEX
DC Current Gain-Min (hFE) 200 JEDEC-95 Code MS-012AB
JESD-30 Code R-PDSO-G14 Moisture Sensitivity Level 1
Number of Elements 4 Number of Terminals 14
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type NPN
Surface Mount YES Terminal Finish MATTE TIN
Terminal Form GULL WING Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30 Transistor Element Material SILICON

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