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MMBT5550 +BOM

NPN Epitaxial Silicon Transistor

email Email: [email protected]
skype Skype: live:.cid.ab6b29428937b76
tel Tel: +852 95804164

Key Features

  • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers.

Application

  • This product is general usage and suitable for many different applications.

Specifications

Product Category Bipolar Transistors - BJT Mounting Style SMD/SMT
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 140 V Collector- Base Voltage VCBO 160 V
Emitter- Base Voltage VEBO 6 V Collector-Emitter Saturation Voltage 250 mV
Maximum DC Collector Current 600 mA Pd - Power Dissipation 225 mW
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Continuous Collector Current 600 mA DC Collector/Base Gain hfe Min 60
DC Current Gain hFE Max 250 Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 3000 Subcategory Transistors
Technology Si

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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In Stock: 5,902

Minimum Order: 1

Qty. Unit Price Ext. Price
20+ $0.023 $0.46
200+ $0.018 $3.60
600+ $0.017 $10.20
3000+ $0.015 $45.00
9000+ $0.013 $117.00
21000+ $0.013 $273.00

The prices below are for reference only.

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