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NE5531079A-T1-A +BOM

RF MOSFET Transistors Silicon Medium Power LDMOSFET RoHS compliant

NE5531079A-T1-A General Description

RF Mosfet 7.5 V 200 mA 460MHz 40dBm 79A

Renesas Technology Corp Inventory
Renesas Technology Corp Original Stock
Renesas Technology Corp Inventory

Specifications

Product Category: RF MOSFET Transistors Transistor Polarity: N-Channel
Technology: Si Id - Continuous Drain Current: 3 A
Vds - Drain-Source Breakdown Voltage: 30 V Operating Frequency: 460 MHz
Gain: 20.5 dB Output Power: 40 dBm
Maximum Operating Temperature: + 125 C Mounting Style: SMD/SMT
Packaging: Tape Configuration: Single
Pd - Power Dissipation: 35 W Product Type: RF MOSFET Transistors
Subcategory: MOSFETs Transistor Type: LDMOS FET
Type: RF Power MOSFET Vgs - Gate-Source Voltage: 6 V
Vgs th - Gate-Source Threshold Voltage: 1.15 V

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In Stock: 3,617

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $8.860 $8.86
200+ $3.429 $685.80
500+ $3.309 $1,654.50
1000+ $3.249 $3,249.00

The prices below are for reference only.

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