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DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84, 0.80 MM PITCH, GREEN, BGA-84
BGAManufacturer:
NANYA TECHNOLOGY CORP
Mfr.Part #:
NT5TU32M16BG-3C
Datasheet:
Part Life Cycle Code:
Active
Pin Count:
84
Reach Compliance Code:
compliant
ECCN Code:
EAR99
EDA/CAD Models:
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Part Life Cycle Code | Active | Pin Count | 84 |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
HTS Code | 8542.32.00.28 | Access Mode | FOUR BANK PAGE BURST |
Access Time-Max | 0.45 ns | Additional Feature | AUTO/SELF REFRESH |
Clock Frequency-Max (fCLK) | 333 MHz | I/O Type | COMMON |
Interleaved Burst Length | 4,8 | JESD-30 Code | R-PBGA-B84 |
Length | 12.5 mm | Memory Density | 536870912 bit |
Memory IC Type | DDR2 DRAM | Memory Width | 16 |
Number of Functions | 1 | Number of Ports | 1 |
Number of Terminals | 84 | Number of Words | 33554432 words |
Number of Words Code | 32000000 | Operating Mode | SYNCHRONOUS |
Operating Temperature-Max | 85 °C | Operating Temperature-Min | |
Organization | 32MX16 | Output Characteristics | 3-STATE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | Power Supplies | 1.8 V |
Qualification Status | Not Qualified | Refresh Cycles | 8192 |
Seated Height-Max | 1.2 mm | Self Refresh | YES |
Sequential Burst Length | 4,8 | Standby Current-Max | 0.007 A |
Supply Current-Max | 0.27 mA | Supply Voltage-Max (Vsup) | 1.9 V |
Supply Voltage-Min (Vsup) | 1.7 V | Supply Voltage-Nom (Vsup) | 1.8 V |
Surface Mount | YES | Technology | CMOS |
Temperature Grade | OTHER | Terminal Form | BALL |
Terminal Pitch | 0.8 mm | Terminal Position | BOTTOM |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Width | 10 mm |
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