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PBHV8215Z +BOM

This small signal bipolar transistor, PBHV8215Z, is engineered for efficient signal amplification

PBHV8215Z General Description

General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.PNP complement: PBHV9215Z.Features■ High voltage■ Low collector-emitter saturation voltage VCEsat■ High collector current capability IC and ICM■ High collector current gain (hFE) at high IC■ AEC-Q101 qualified■ Medium power SMD plastic packageApplications■ LED driver for LED chain module■ LCD backlighting■ Automotive motor management■ Switch Mode Power Supply (SMPS)

Key Features

  • High voltage
  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • AEC-Q101 qualified
  • Medium power SMD plastic package

Specifications

Product Category NXP Semiconductors

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