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See Technical Specifications

PC48F4400P0VB0EE +BOM

NOR Flash Parallel 512Mbit

Manufacturer:

Micron Technology Inc.
Mfr.Part #:

PC48F4400P0VB0EE
Datasheet:

PC48F4400P0VB0EE Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Obsolete
Pin Count:

64
Reach Compliance Code:

compliant
EDA/CAD Models:

Request Free CAD Models for PC48F4400P0VB0EE

Email: [email protected]

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Tel: +852 95804164

PC48F4400P0VB0EE General Description

The PC48F4400P0VB0EE from Micron Technology is a top-of-the-line NAND flash memory chip designed for high-speed data access and reliability. With a storage capacity of 4GB and a voltage of 3.3V, this chip is ideal for use in solid-state drives (SSDs) and industrial equipment that require fast and efficient data storage. Its parallel interface and maximum clock frequency of 40MHz ensure quick and seamless data transfer, while its 2KB page size and 128KB block size allow for efficient storage and retrieval of large amounts of data. Additionally, the built-in error correction codes (ECC) and wear-leveling algorithm guarantee data integrity and prolong the lifespan of the memory cells, ensuring long-term reliability. The PC48F4400P0VB0EE is also designed to operate in a wide temperature range, making it suitable for use in a variety of environmental conditions

Key Features

High Performance Read-While-Write/Erase
— Burst frequency at 66 MHz (zero wait states)
—60ns Initial access read speed
— 11 ns Burst mode read speed
— 20 ns Page mode read speed
— 4-, 8-, 16-, and Continuous-Word Burst mode reads
— Burst and Page mode reads in all Blocks, across all partition boundaries
— Burst Suspend feature
— Enhanced Factory Programming at 3.1 µs/word
Security
—128-BitOTP Protection Register:
64 unique pre-programmed bits + 64 user-programmable bits
— Absolute Write Protection with VPP at ground
— Individual and Instantaneous Block Locking/Unlocking with Lock-Down Capability
Quality and Reliability
—Temperature Range:–40 °C to +85 °C
— 100K Erase Cycles per Block
— 90 nm ETOX™ IX Process
— 130 nm ETOX™ VIII Process
Architecture
— Multiple 4-Mbit partitions
— Dual Operation: RWW or RWE
— Parameter block size = 4-Kword
— Main block size = 32-Kword
— Top or bottom parameter devices
—16-bit wide data bus
Software
— 5 µs (typ.) Program and Erase Suspend latency time
— Flash Data Integrator (FDI) and Common Flash Interface (CFI) Compatible
— Programmable WAIT signal polarity
Packaging and Power
— 90 nm: 32- and 64-Mbit in VF BGA
— 130 nm: 32-, 64-, and 128-Mbit in VF BGA
— 130 nm: 128-Mbit in QUAD+ package
— 56 Active Ball Matrix, 0.75 mm Ball-Pitch
—VCC= 1.70 V to 1.95 V
—VCCQ(90 nm) = 1.7 V to 1.95 V
—VCCQ(130 nm) = 1.7 V to 2.24 V or 1.35 V to 1.80 V
—VCCQ(130 nm) = 1.35 V to 2.24 V
— Standby current (130 nm): 8 µA (typ.)
— Read current: 8 mA (4-word burst, typ.)

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Obsolete
Pin Count	64	Reach Compliance Code	compliant
ECCN Code	EAR99	HTS Code	8542.32.00.51
Access Time-Max	100 ns	Additional Feature	ASYNCHRONOUS READ MODE
Boot Block	BOTTOM/TOP	Command User Interface	YES
Common Flash Interface	YES	Data Polling	NO
JESD-30 Code	R-PBGA-B64	JESD-609 Code	e1
Length	13 mm	Memory Density	536870912 bit
Memory IC Type	FLASH	Memory Width	16
Number of Functions	1	Number of Sectors/Size	8, 510
Number of Terminals	64	Number of Words	33554432 words
Number of Words Code	32000000	Operating Mode	SYNCHRONOUS
Operating Temperature-Max	85 °C	Operating Temperature-Min	-40 °C
Organization	32MX16	Parallel/Serial	PARALLEL
Peak Reflow Temperature (Cel)	260	Programming Voltage	1.8 V
Qualification Status	Not Qualified	Seated Height-Max	1.2 mm
Sector Size	16K,64K	Standby Current-Max	0.00042 A
Supply Current-Max	0.031 mA	Supply Voltage-Max (Vsup)	2 V
Supply Voltage-Min (Vsup)	1.7 V	Supply Voltage-Nom (Vsup)	1.8 V
Surface Mount	YES	Technology	CMOS
Temperature Grade	INDUSTRIAL	Terminal Finish	TIN SILVER COPPER
Terminal Form	BALL	Terminal Pitch	1 mm
Terminal Position	BOTTOM	Time@Peak Reflow Temperature-Max (s)	30
Toggle Bit	NO	Type	NOR TYPE
Width	10 mm