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PHB47NQ10T,118 +BOM

N-Channel 100 V 47A (Tc) 166W (Tc) Surface Mount D2PAK

Manufacturer:

Nexperia Semiconductor (NXP)
Mfr.Part #:

PHB47NQ10T,118
Datasheet:

PHB47NQ10T,118 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for PHB47NQ10T,118

Email: [email protected]

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PHB47NQ10T,118 General Description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Key Features

Low conduction losses due to low on-state resistance
Suitable for high frequency applications due to fast switching characteristics

Nexperia Semiconductor (NXP) Original Stock

Application

DC-to-DC convertors
Switched-mode power supplies

Specifications

Product Category:	MOSFET	Technology:	Si
Mounting Style:	SMD/SMT	Transistor Polarity:	N-Channel
Number of Channels:	1 Channel	Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	47 A	Rds On - Drain-Source Resistance:	28 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	66 nC	Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C	Pd - Power Dissipation:	166 W
Channel Mode:	Enhancement	Packaging:	MouseReel
Product Type:	MOSFET	Factory Pack Quantity:	800
Subcategory:	MOSFETs	Part # Aliases:	934056745118
Unit Weight:	0.139332 oz