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PHPT610035NKX +BOM

NPN/NPN high power double bipolar transistor

Manufacturer:

Nexperia
Mfr.Part #:

PHPT610035NKX
Datasheet:

PHPT610035NKX Datasheet (PDF)
Mounting Style:

SMD/SMT
Transistor Polarity:

NPN
Configuration:

Dual
Collector- Emitter Voltage VCEO Max:

100 V

PHPT610035NKX General Description

The PHPT610035NKX is a high power double bipolar transistor designed for surface-mounted device (SMD) applications. It comes in a LFPAK56D power plastic package, making it suitable for a wide range of power electronic systems. This transistor is a matched version of the PHPT610030NK and has NPN/NPN configuration. It also has PNP/PNP complement, PHPT610035PK, and NPN/PNP complement, PHPT610035NP. With its high power capabilities and versatile configuration options, this transistor is ideal for use in various electronic devices and circuits

Key Features

Current gain matching 5%
High thermal power dissipation capability
Suitable for high temperature applications up to 175 °C
Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
High energy efficiency due to less heat generation
AEC-Q101 qualified

Application

Current mirror
Motor control
Power management
Backlighting applications
Relay replacement
differential amplifiers

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	SMD/SMT
Transistor Polarity	NPN	Configuration	Dual
Collector- Emitter Voltage VCEO Max	100 V	Collector- Base Voltage VCBO	100 V
Emitter- Base Voltage VEBO	7 V	Collector-Emitter Saturation Voltage	225 mV
Maximum DC Collector Current	3 A	Pd - Power Dissipation	25 W
Gain Bandwidth Product fT	140 MHz	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Product Type	BJTs - Bipolar Transistors
Factory Pack Quantity	1500	Subcategory	Transistors
Technology	Si	Part # Aliases	934068169115
Unit Weight	0.003411 oz