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See Technical Specifications

PMV15ENEAR +BOM

30 V, N-channel Trench MOSFET

Manufacturer:

NEXPERIA
Mfr.Part #:

PMV15ENEAR
Datasheet:

PMV15ENEAR Datasheet (PDF)
Part Life Cycle Code:

Active
Pin Count:

3
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for PMV15ENEAR

PMV15ENEAR General Description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Key Features

Fast switching frequency
Low on-state resistance
High temperature tolerance

Application

Relay control
Quick line driver
Switch circuits

Specifications

Source Content uid	PMV15ENEAR	Part Life Cycle Code	Active
Pin Count	3	Reach Compliance Code	compliant
ECCN Code	EAR99	Avalanche Energy Rating (Eas)	17.4 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	30 V
Drain Current-Max (ID)	6.2 A	Drain-source On Resistance-Max	0.02 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	Feedback Cap-Max (Crss)	75 pF
JEDEC-95 Code	TO-236AB	JESD-30 Code	R-PDSO-G3
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Operating Temperature-Min	-55 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	8.3 W
Pulsed Drain Current-Max (IDM)	25 A	Reference Standard	AEC-Q101; IEC-60134
Surface Mount	YES	Terminal Finish	TIN
Terminal Form	GULL WING	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON