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See Technical Specifications

PMV55ENEAR +BOM

Trans MOSFET N-CH 60V 3.1A 3-Pin SOT-23 T/R

Manufacturer:

NEXPERIA
Mfr.Part #:

PMV55ENEAR
Datasheet:

PMV55ENEAR Datasheet (PDF)
Part Life Cycle Code:

Active
Pin Count:

3
Reach Compliance Code:

compliant
Configuration:

SINGLE WITH BUILT-IN DIODE
EDA/CAD Models:

Request Free CAD Models for PMV55ENEAR

PMV55ENEAR General Description

The PMV55ENEAR is a reliable N-channel MOSFET suitable for a wide range of industrial and automotive applications. With a continuous drain current of 3.1A and a drain source voltage of 60V, this MOSFET offers a low on resistance of 0.046ohm at a test voltage of 10V. It has a threshold voltage of 1.7V and a power dissipation of 478mW. Housed in a TO-236AB case style with 3 pins, the transistor can operate at temperatures of up to 150°C. It meets the automotive qualification standard AEC-Q101 and has a MSL rating of MSL 1 - Unlimited. Furthermore, it is free from SVHC as of 15th January 2018

Application

SWITCHING

Specifications

Source Content uid	PMV55ENEAR	Part Life Cycle Code	Active
Pin Count	3	Reach Compliance Code	compliant
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	60 V
Drain Current-Max (ID)	3.1 A	Drain-source On Resistance-Max	0.06 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-236AB
JESD-30 Code	R-PDSO-G3	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Reference Standard	AEC-Q101; IEC-60134	Surface Mount	YES
Terminal Finish	TIN	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON