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See Technical Specifications

PMV88ENEAR +BOM

ROHS compliant and suitable for various applications

Manufacturer:

NEXPERIA
Mfr.Part #:

PMV88ENEAR
Datasheet:

PMV88ENEAR Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

60 V
Current - Continuous Drain (Id) @ 25°C:

2.2A (Ta)
EDA/CAD Models:

Request Free CAD Models for PMV88ENEAR

PMV88ENEAR General Description

Featuring state-of-the-art Trench MOSFET technology, the PMV88ENEAR is a premium N-channel enhancement mode Field-Effect Transistor (FET) encapsulated in a diminutive SOT23 Surface-Mounted Device (SMD) plastic package. With its small footprint and high performance capabilities, this transistor is a versatile solution for various electronics projects

Key Features

Smart power management
Overcurrent protection
Surge withstand capability
Robust system integration

Application

Logic level converter
Load switch
Motor driver

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V	Current - Continuous Drain (Id) @ 25°C	2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Rds On (Max) @ Id, Vgs	117mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id	2.7V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	6 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	196 pF @ 30 V
FET Feature	-	Power Dissipation (Max)	615mW (Ta), 7.5W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount