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PN918 +BOM

RF Transistor NPN 15V 50mA 600MHz 350mW Through Hole TO-92-3

PN918 General Description

RF Transistor NPN 15V 50mA 600MHz 350mW Through Hole TO-92-3

Specifications

Product Category RF Bipolar Transistors Series PN918
Transistor Type Bipolar Technology Si
Transistor Polarity NPN Operating Frequency 600 MHz
DC Collector/Base Gain hfe Min 20 Collector- Emitter Voltage VCEO Max 15 V
Emitter- Base Voltage VEBO 3 V Continuous Collector Current 50 mA
Minimum Operating Temperature - 65 C Maximum Operating Temperature + 150 C
Configuration Single Mounting Style Through Hole
Collector- Base Voltage VCBO 30 V DC Current Gain hFE Max 20 at 3 mA at 1 V
Gain Bandwidth Product fT 600 MHz (Min) Height 5.33 mm
Length 5.2 mm Maximum DC Collector Current 50 mA
Pd - Power Dissipation 350 mW Product Type RF Bipolar Transistors
Factory Pack Quantity 2000 Subcategory Transistors
Type RF Bipolar Small Signal Width 4.19 mm
Unit Weight 0.007090 oz

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