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High-power amplifier module for wireless communication systems
H-36275-4Manufacturer:
Wolfspeed
Mfr.Part #:
PTVA127002EV-V1-R0
Datasheet:
Transistor Polarity:
N-Channel
Technology:
Si
Vds - Drain-Source Breakdown Voltage:
105 V
Rds On - Drain-Source Resistance:
100 mOhms
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RF Mosfet 50 V 150 mA 1.2GHz ~ 1.4GHz 16dB 700W H-36275-4
Product Category | RF MOSFET Transistors | Transistor Polarity | N-Channel |
Technology | Si | Vds - Drain-Source Breakdown Voltage | 105 V |
Rds On - Drain-Source Resistance | 100 mOhms | Operating Frequency | 1.2 GHz to 1.4 GHz |
Gain | 16 dB | Output Power | 700 W |
Maximum Operating Temperature | + 225 C | Mounting Style | SMD/SMT |
Number of Channels | 1 Channel | Product Type | RF MOSFET Transistors |
Factory Pack Quantity | 50 | Subcategory | MOSFETs |
Transistor Type | LDMOS FET | Type | RF Power MOSFET |
Vgs - Gate-Source Voltage | 10 V |
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