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See Technical Specifications

QID4515001 +BOM

Trans IGBT Module N-CH 4.5KV 150A 8-Pin

Manufacturer:

Powerex, Inc
Mfr.Part #:

QID4515001
Datasheet:

QID4515001 Datasheet (PDF)
Series:

IGBTMOD™
Configuration:

Half Bridge
Voltage - Collector Emitter Breakdown (Max):

4500 V
Current - Collector (Ic) (Max):

150 A
EDA/CAD Models:

Request Free CAD Models for QID4515001

Email: [email protected]

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Tel: +852 95804164

QID4515001 General Description

Operating at a maximum temperature of 150°C, the QID4515001 is built to withstand even the harshest conditions. The tab termination design simplifies installation, while the maximum collector-emitter voltage of 4.5kV provides ample margin for your application

Specifications

Category	Discrete Semiconductor ProductsTransistorsIGBTsIGBT Modules	Series	IGBTMOD™
IGBT Type	-	Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	4500 V	Current - Collector (Ic) (Max)	150 A
Power - Max	1440 W	Vce(on) (Max) @ Vge, Ic	3.9V @ 15V, 150A
Current - Collector Cutoff (Max)	2.7 mA	Input Capacitance (Cies) @ Vce	18 nF @ 10 V
Input	Standard	NTC Thermistor	No
Operating Temperature	-40°C ~ 150°C (TJ)	Mount	Screw
Number of Pins	8	Collector Emitter Breakdown Voltage	4.5 kV
Collector Emitter Voltage (VCEO)	3.9 V	Element Configuration	Dual
Input Capacitance	18 nF	Max Collector Current	150 A
Max Operating Temperature	150 °C	Max Power Dissipation	1.44 kW
Min Operating Temperature	-40 °C	Polarity	NPN