This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

QS8J13TR +BOM

Mosfet Array 12V 5.5A 1.25W Surface Mount TSMT8

Manufacturer:

Rohm Semiconductor
Mfr.Part #:

QS8J13TR
Datasheet:

QS8J13TR Datasheet (PDF)
Technology:

MOSFET (Metal Oxide)
Configuration:

2 P-Channel (Dual)
FET Feature:

Logic Level Gate
Drain to Source Voltage (Vdss):

12V
EDA/CAD Models:

Request Free CAD Models for QS8J13TR

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

QS8J13TR General Description

Power Field-Effect Transistor, 5.5A I(D), 12V, 0.022ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, TSMT8, 8 PIN

Application

SWITCHING

Specifications

Technology	MOSFET (Metal Oxide)	Configuration	2 P-Channel (Dual)
FET Feature	Logic Level Gate	Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	5.5A	Rds On (Max) @ Id, Vgs	22mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs	60nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	6300pF @ 6V	Power - Max	1.25W
Operating Temperature	150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	QS8J13