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R1LP0108ESP-7SR#B0 +BOM

Renesas Electronics

R1LP0108ESP-7SR#B0 General Description

Built on Renesas's proprietary Advanced LPSRAM memory cell concept, this innovative solution promises improved functionality, reliability, and power efficiency. What's more, the company's long-term commitment to supporting these products ensures a seamless experience for customers looking to scale their projects

Specifications

Source Content uid R1LP0108ESP-7SR#B0 Pbfree Code Yes
Part Life Cycle Code Obsolete Pin Count 32
Reach Compliance Code ECCN Code EAR99
HTS Code 8542.32.00.41 I/O Type COMMON
JESD-30 Code R-PDSO-G32 Memory IC Type STANDARD SRAM
Memory Organization 128KX8 Memory Width 8
Moisture Sensitivity Level 2 Number of Functions 1
Number of Terminals 32 Number of Words Code 128000
Operating Mode ASYNCHRONOUS Output Characteristics 3-STATE
Parallel/Serial PARALLEL Surface Mount YES
Technology CMOS Temperature Grade COMMERCIAL
Terminal Form GULL WING Terminal Position DUAL

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