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Operating voltage of 3V for efficient power consumption
44-TSOP IIManufacturer:
Mfr.Part #:
R1LV0808ASB-5SI#B0
Datasheet:
Pbfree Code:
Yes
Part Life Cycle Code:
Obsolete
Pin Count:
44
Reach Compliance Code:
compliant
EDA/CAD Models:
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Embracing Renesas's R1LV0808ASB-5SI#B0 product ensures customers receive exceptional support from the leading Low Power SRAM supplier worldwide. Renesas's dedication to providing high-quality, high-density, and high-performance RAMs is evident in their innovative technologies, including the Advanced LPSRAM memory cell concept. Customers can rely on Renesas for cutting-edge memory solutions and long-term support, making them the go-to choice for memory needs
Source Content uid | R1LV0808ASB-5SI#B0 | Pbfree Code | Yes |
Part Life Cycle Code | Obsolete | Pin Count | 44 |
Reach Compliance Code | compliant | ECCN Code | 3A991.B.2.A |
HTS Code | 8542.32.00.41 | I/O Type | COMMON |
JESD-30 Code | R-PDSO-G44 | Memory IC Type | STANDARD SRAM |
Memory Organization | 1MX8 | Memory Width | 8 |
Moisture Sensitivity Level | 3 | Number of Functions | 1 |
Number of Terminals | 44 | Number of Words Code | 1000000 |
Operating Mode | ASYNCHRONOUS | Output Characteristics | 3-STATE |
Parallel/Serial | PARALLEL | Peak Reflow Temperature (Cel) | 260 |
Surface Mount | YES | Technology | CMOS |
Temperature Grade | INDUSTRIAL | Terminal Form | GULL WING |
Terminal Position | DUAL |
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