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N-Channel 650 V 20A (Tc) 220W (Tc) Through Hole TO-220AB
TO-220AB-3Manufacturer:
Mfr.Part #:
R6520KNX3C16
Datasheet:
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
EDA/CAD Models:
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N-Channel 650 V 20A (Tc) 220W (Tc) Through Hole TO-220AB
Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs | Series | - |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650 V | Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V | Rds On (Max) @ Id, Vgs | 205mOhm @9.5A, 10V |
Vgs(th) (Max) @ Id | 5V @ 630µA | Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 1550 pF @ 25 V |
FET Feature | - | Power Dissipation (Max) | 220W (Tc) |
Operating Temperature | 150°C (TJ) | Mounting Type | Through Hole |
Base Product Number | R6520 | Product Category: | MOSFET |
Technology: | Si | Mounting Style: | Through Hole |
Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 650 V | Id - Continuous Drain Current: | 20 A |
Rds On - Drain-Source Resistance: | 205 mOhms | Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 5 V | Qg - Gate Charge: | 40 nC |
Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 220 W | Channel Mode: | Enhancement |
Packaging: | Tube | Configuration: | Single |
Fall Time: | 30 ns | Product Type: | MOSFET |
Rise Time: | 50 ns | Factory Pack Quantity: | 50 |
Subcategory: | MOSFETs | Typical Turn-Off Delay Time: | 75 ns |
Typical Turn-On Delay Time: | 30 ns | Part # Aliases: | R6520KNX3 |
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