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See Technical Specifications

RSJ250P10FRATL +BOM

Trans MOSFET P-CH Si 100V 25A Automotive AEC-Q101 3-Pin(2+Tab) LPTS T/R

Manufacturer:

ROHM Semiconductor
Mfr.Part #:

RSJ250P10FRATL
Datasheet:

RSJ250P10FRATL Datasheet (PDF)
Series:

Automotive, AEC-Q101
FET Type:

P-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

100 V
EDA/CAD Models:

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RSJ250P10FRATL General Description

The RSJ250P10FRATL Rectifier Diode Module from Vishay Semiconductors offers high-performance reliability in a compact package. With a maximum repetitive peak reverse voltage of 1000 V and a maximum average forward current of 250 A, this module is ideal for demanding industrial and commercial applications. Its low forward voltage drop and high surge current capability ensure consistent and efficient operation

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	Automotive, AEC-Q101
FET Type	P-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V	Current - Continuous Drain (Id) @ 25°C	25A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V	Rds On (Max) @ Id, Vgs	63mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs	60 nC @ 5 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	8000 pF @ 25 V
FET Feature	-	Power Dissipation (Max)	50W (Ta)
Operating Temperature	150°C	Mounting Type	Surface Mount
Base Product Number	RSJ250