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RTR030P02HZGTL +BOM

Automotive -3A Pch Small Signal MOSFET with -20V Rating

Manufacturer:

ROHM Semiconductor
Mfr.Part #:

RTR030P02HZGTL
Datasheet:

RTR030P02HZGTL Datasheet (PDF)
Series:

Automotive, AEC-Q101
FET Type:

P-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

20 V
EDA/CAD Models:

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RTR030P02HZGTL General Description

Renesas Electronics' RTR030P02HZGTL power MOSFET, housed in a PG-TSON-8 package, is a versatile semiconductor device that caters to the ever-evolving needs of power conversion circuits. Its high drain-source voltage rating and low on-state resistance contribute to efficient power management, while the ±8V gate-source voltage and 1.3nC total gate charge ensure precise control over the device. Whether it's regulating voltage, controlling motors, or managing batteries, the RTR030P02HZGTL delivers exceptional performance across a wide operating temperature range (-55°C to 150°C), making it a reliable choice for various industrial and consumer electronics applications

Key Features

Low on-resistance
Built-in G-S protection diode
Small surface mount package(TSMT3)
Pb-free lead plating; RoHS compliant
AEC-Q101 Qualified

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	Automotive, AEC-Q101
FET Type	P-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V	Current - Continuous Drain (Id) @ 25°C	3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V	Rds On (Max) @ Id, Vgs	75mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id	2V @ 34µA	Gate Charge (Qg) (Max) @ Vgs	9.3 nC @ 4.5 V
Vgs (Max)	±12V	Input Capacitance (Ciss) (Max) @ Vds	840 pF @ 10 V
FET Feature	-	Power Dissipation (Max)	700mW (Ta)
Operating Temperature	150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	RTR030