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See Technical Specifications

SEMIX302GB128DS +BOM

Insulated Gate Bipolar Transistor, 310A I(C), 1200V V(BR)CES, N-Channel, CASE SEMIX 2S, 15 PIN

Manufacturer:

SEMIKRON
Mfr.Part #:

SEMIX302GB128DS
Datasheet:

SEMIX302GB128DS Datasheet (PDF)
Part Life Cycle Code:

Obsolete
Pin Count:

15
ECCN Code:

EAR99
Case Connection:

ISOLATED
EDA/CAD Models:

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SEMIX302GB128DS General Description

Features• Homogeneous Si• SPT = Soft-Punch-Through technology• VCE(sat) with positive temperature coefficient• High short circuit capabilityTypical Applications• AC inverter drives• UPS• Electronic welders up to 20 kHz

Key Features

Homogeneous Si
SPT = Soft-Punch-Through technology
VCE(sat) with positive temperature coefficient
High short circuit capability

Specifications

Part Life Cycle Code	Obsolete	Pin Count	15
Reach Compliance Code		ECCN Code	EAR99
Case Connection	ISOLATED	Collector Current-Max (IC)	310 A
Collector-Emitter Voltage-Max	1200 V	Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 Code	R-XUFM-X15	JESD-609 Code	e2
Number of Elements	2	Number of Terminals	15
Polarity/Channel Type	N-CHANNEL	Qualification Status	Not Qualified
Surface Mount	NO	Terminal Finish	TIN SILVER
Terminal Form	UNSPECIFIED	Terminal Position	UPPER
Transistor Application	POWER CONTROL	Transistor Element Material	SILICON
Turn-off Time-Nom (toff)	522 ns	Turn-on Time-Nom (ton)	239 ns