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SKM100GAR123D +BOM

Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, CASE D63, SEMITRANS2-7

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SKM100GAR123D General Description

SEMITRANS® IGBT Modules; New Range 1995/963rd Version: Low Inductance, lower VCEsat, soft and fast CAL diodes1); Preliminary Data 4)

Specifications

Pbfree Code Yes Part Life Cycle Code Obsolete
Pin Count 2 Reach Compliance Code compliant
ECCN Code EAR99 Case Connection ISOLATED
Collector Current-Max (IC) 100 A Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X5 JESD-609 Code e2
Number of Elements 1 Number of Terminals 5
Operating Temperature-Max 150 °C Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 625 W Qualification Status Not Qualified
Reference Standard UL RECOGNIZED Surface Mount NO
Terminal Finish TIN SILVER Terminal Form UNSPECIFIED
Terminal Position UPPER Transistor Application POWER CONTROL
Transistor Element Material SILICON Turn-off Time-Nom (toff) 520 ns
Turn-on Time-Nom (ton) 100 ns VCEsat-Max 3 V

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