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See Technical Specifications

SKM100GB123D +BOM

Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, CASE D61, SEMITRANS2-7

Manufacturer:

SEMIKRON
Mfr.Part #:

SKM100GB123D
Datasheet:

SKM100GB123D Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Obsolete
Pin Count:

2
Reach Compliance Code:

compliant
EDA/CAD Models:

Request Free CAD Models for SKM100GB123D

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SKM100GB123D General Description

not recommended for new design Features: MOS input (voltage controlled) N channel, Homogeneous Si Low inductance case Very low tail current with low temperature dependence High short circuit capability, self limiting 6 x I cnom Latch-up free Fast & soft inverse CAL diodes Isolated copper baseplate using DCB Direct Copper Bonding Technology Large clearance (10 mm) and creepage distances (20 mm) Typical Applications: AC inverter drives UPS

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Obsolete
Pin Count	2	Reach Compliance Code	compliant
ECCN Code	EAR99	Case Connection	ISOLATED
Collector Current-Max (IC)	100 A	Collector-Emitter Voltage-Max	1200 V
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	Gate-Emitter Voltage-Max	20 V
JESD-30 Code	R-XUFM-X7	JESD-609 Code	e2
Number of Elements	2	Number of Terminals	7
Operating Temperature-Max	150 °C	Operating Temperature-Min	-40 °C
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	625 W
Qualification Status	Not Qualified	Reference Standard	UL RECOGNIZED
Surface Mount	NO	Terminal Finish	TIN SILVER
Terminal Form	UNSPECIFIED	Terminal Position	UPPER
Transistor Application	POWER CONTROL	Transistor Element Material	SILICON
Turn-off Time-Nom (toff)	520 ns	Turn-on Time-Nom (ton)	100 ns
VCEsat-Max	3 V