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See Technical Specifications

SKM195GB063DN +BOM

French Electronic Distributor since 1988

Manufacturer:

SEMIKRON
Mfr.Part #:

SKM195GB063DN
Datasheet:

SKM195GB063DN Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

2
Reach Compliance Code:

compliant
EDA/CAD Models:

Request Free CAD Models for SKM195GB063DN

Email: [email protected]

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Tel: +852 95804164

SKM195GB063DN General Description

SEMITRANS NPT-IGBT MODULES; DC Collector Current:250A; Collector Emitter Voltage, Vces:600V; Collector Emitter Voltage, V(br)ceo:600V; Operating Temperature Range:-40°C to +150°C; No. of Pins:7; Transistor Type:IGBT ;RoHS Compliant: Yes

Key Features

VCE(sat) with positive temperature coefficient
High short circuit capability, self limiting to 6 x Icnom
Fast & soft inverse CAL diodes
Large clearance (10 mm) and creepage distances (20 mm)
Isolated copper baseplate using DBC Technology (Direct Copper Bonding)
UL recognized, file no. E63532

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Active
Pin Count	2	Reach Compliance Code	compliant
ECCN Code	EAR99	Case Connection	ISOLATED
Collector Current-Max (IC)	250 A	Collector-Emitter Voltage-Max	600 V
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	Gate-Emitter Voltage-Max	20 V
JESD-30 Code	R-XUFM-X7	JESD-609 Code	e2
Number of Elements	2	Number of Terminals	7
Operating Temperature-Max	150 °C	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	830 W	Qualification Status	Not Qualified
Reference Standard	UL RECOGNIZED	Surface Mount	NO
Terminal Finish	TIN SILVER	Terminal Form	UNSPECIFIED
Terminal Position	UPPER	Transistor Application	POWER CONTROL
Transistor Element Material	SILICON	Turn-off Time-Nom (toff)	510 ns
Turn-on Time-Nom (ton)	205 ns	VCEsat-Max	2.5 V