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SKM200GB12E4 +BOM

N-channel insulated gate bipolar transistor with , rating

skm200gb12e4

Key Features

  • Half-bridge switch
  • IGBT4 = 4th generation medium fast Trench IGBT (Infineon)
  • CAL4 = Soft switching 4th generation CAL-diode
  • Integrated gate resistor
  • For higher switching frequencies up to 12kHz
  • UL recognized, file number E63532

Application

Power Management

Specifications

ECCN (US) EAR99 Part Status Active
Automotive No PPAP No
Channel Type N Configuration Dual
Typical Collector Emitter Saturation Voltage (V) 1.8 Maximum Collector-Emitter Voltage (V) 1200
Maximum Gate Emitter Voltage (V) ±20 Maximum Continuous Collector Current (A) 313
Minimum Operating Temperature (°C) -40 Maximum Operating Temperature (°C) 175
Mounting Screw PCB changed 7
Pin Count 7

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Ratings and Reviews

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S
S**l 06/10/2021

Went very long, 56 days. The seller sent literally during the day. To the touch, pleasant, ribbed, climb on potentiometers easily, peel tight. Because of the plastic filling thought that it would merge at the first turn, but it is not, quite strong, although metal only from the outside. Very satisfied, i will take more

6

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