This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

SKM40GD123D +BOM

Advanced power electronic device ideal for industrial control and automation system

Manufacturer:

Semikron
Mfr.Part #:

SKM40GD123D
Datasheet:

SKM40GD123D Datasheet (PDF)
ECCN (US):

EAR99
Automotive:

No
PPAP:

No
Channel Type:

N

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

SKM40GD123D General Description

The SKM40GD123D IGBT Module is a high-performance 6-pack transistor ideal for various power electronic applications. With a voltage rating of 1200V and a maximum continuous current of 40A, this module offers reliable and efficient operation in N-channel configurations. The SEMITRANS 6 case style with screw termination ensures easy installation and maintenance. The module's collector-to-emitter breakdown voltage of 1200V and maximum pulsed current of 70A make it suitable for demanding industrial environments. With a power dissipation rating of 200W and a compact external dimensions of 105mm x 24mm x 45mm, the SKM40GD123D offers a balance of performance and space-saving design

Specifications

ECCN (US)	EAR99	Part Status	Obsolete
Automotive	No	PPAP	No
Channel Type	N	Configuration	Hex
Typical Collector Emitter Saturation Voltage (V)	2.5	Maximum Collector-Emitter Voltage (V)	1200
Maximum Gate Emitter Voltage (V)	±20	Maximum Continuous Collector Current (A)	40
Minimum Operating Temperature (°C)	-40	Maximum Operating Temperature (°C)	150
Mounting	Screw	PCB changed	12
Pin Count	12