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See Technical Specifications

SP8K33HZGTB +BOM

Robust and reliable MOSFET designed for high-reliability applications up to 60V

Manufacturer:

ROHM Semiconductor
Mfr.Part #:

SP8K33HZGTB
Datasheet:

SP8K33HZGTB Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

2 Channel
EDA/CAD Models:

Request Free CAD Models for SP8K33HZGTB

Email: [email protected]

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Tel: +852 95804164

SP8K33HZGTB General Description

When it comes to protection, the SP8K33HZGTB comes equipped with a built-in ESD protection diode, providing an additional layer of security against electrical surges and spikes. This feature ensures the longevity and durability of the MOSFET, giving you peace of mind knowing that your circuitry is safeguarded

Key Features

Low on-resistance
Small Surface Mount Package (SOP8)
Pb-free lead plating ; RoHS compliant
Halogen Free
Sn100% plating
AEC-Q101 Qualified

Specifications

Product Category:	MOSFET	Technology:	Si
Mounting Style:	SMD/SMT	Transistor Polarity:	N-Channel
Number of Channels:	2 Channel	Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	5 A	Rds On - Drain-Source Resistance:	48 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	12 nC	Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C	Pd - Power Dissipation:	2 W
Channel Mode:	Enhancement	Qualification:	AEC-Q101
Packaging:	MouseReel	Configuration:	Dual
Fall Time:	20 ns	Product Type:	MOSFET
Rise Time:	20 ns	Factory Pack Quantity:	2500
Subcategory:	MOSFETs	Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	40 ns	Typical Turn-On Delay Time:	12 ns
Part # Aliases:	SP8K33HZG