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TK20J50D(F) +BOM

3-Pin (3+Tab) Configuration

Application

SWITCHING

Specifications

Source Content uid TK20J50D(F) Part Life Cycle Code Active
Reach Compliance Code ECCN Code EAR99
Factory Lead Time 16 Weeks Avalanche Energy Rating (Eas) 470 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.27 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 280 W
Pulsed Drain Current-Max (IDM) 80 A Surface Mount NO
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30 Transistor Application SWITCHING
Transistor Element Material SILICON

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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