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TSM60N900CH +BOM
N-channel MOSFET with 600V voltage rating, 4.5A current capacity, and 900mOhm on-resistance
TO-251-3-
Manufacturer:
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Mfr.Part #:
TSM60N900CH
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Datasheet:
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Technology:
Si
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Mounting Style:
Through Hole
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Transistor Polarity:
N-Channel
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Number Of Channels:
1 Channel
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EDA/CAD Models:
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Availability: 7072 PCS
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Avaq Semiconductor offers the highly versatile and reliable TSM60N900CH driver, produced by Taiwan Semiconductor. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.
To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the TSM60N900CH.
Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.
Specifications
Product Category | MOSFET | Technology | Si |
Mounting Style | Through Hole | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 600 V |
Id - Continuous Drain Current | 4.5 A | Rds On - Drain-Source Resistance | 720 mOhms |
Vgs - Gate-Source Voltage | - 30 V, + 30 V | Vgs th - Gate-Source Threshold Voltage | 2 V |
Qg - Gate Charge | 9.7 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 50 W |
Channel Mode | Enhancement | Configuration | Single |
Fall Time | 12 ns | Product Type | MOSFET |
Rise Time | 16 ns | Factory Pack Quantity | 3750 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 22 ns | Typical Turn-On Delay Time | 12 ns |
Part # Aliases | TSM60N900CH C5G | Unit Weight | 0.011993 oz |
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In Stock: 7,072
Minimum Order: 1
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