This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

UMH3NTN +BOM

SOT-363-packaged bipolar transistors configured as pre-biased DUAL NPN components, designed to handle currents of up to 100mA at 50V

Manufacturer:

ROHM Semiconductor
Mfr.Part #:

UMH3NTN
Datasheet:

UMH3NTN Datasheet (PDF)
Transistor Type:

2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):

100mA
Voltage - Collector Emitter Breakdown (Max):

50V
Resistor - Base (R1):

4.7kOhms
EDA/CAD Models:

Request Free CAD Models for UMH3NTN

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

UMH3NTN General Description

At UMH3NTN, the focus is not just on treating mental health issues, but on fostering holistic well-being and empowerment. Their collaborative approach ensures that each individual's unique needs and goals are met, leading to more personalized and effective treatment plans. By providing assistance with accessing mental health services and navigating the complexities of the healthcare system, UMH3NTN serves as a valuable ally in the fight for mental health equality. Their commitment to advocacy and policy reform further underscores the organization's unwavering dedication to improving the lives of those affected by mental health challenges

Specifications

Category	Discrete Semiconductor ProductsTransistorsBipolar (BJT)Bipolar Transistor Arrays, Pre-Biased	Series	-
Transistor Type	2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V	Resistor - Base (R1)	4.7kOhms
Resistor - Emitter Base (R2)	-	DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA	Current - Collector Cutoff (Max)	-
Frequency - Transition	250MHz	Power - Max	150mW
Mounting Type	Surface Mount	Base Product Number	UMH3