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VEMT2520X01 +BOM

Silicon NPN Phototransistor

VEMT2520X01 General Description

Phototransistors 850nm Top View 2-SMD, Gull Wing

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Key Features

  • Package type: surface mount
  • Package form: GW, RGW
  • Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8
  • AEC-Q101 qualified
  • High radiant sensitivity
  • Suitable for visible and near infrared radiation
  • Fast response times
  • Angle of half sensitivity: ϕ = ± 15°
  • Package matched with IR emitter series VSMB2000X01
  • Floor life: 4 weeks, MSL 2a, acc. J-STD-020
  • Lead (Pb)-free reflow soldering
  • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
    • Vishay Original Stock

    Application

    • oDetector in automotive applications
    • oPhoto interrupters
    • oMiniature switches
    • oCounters
    • oEncoders
    • oPosition sensors
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    Specifications

    Product Category Phototransistors Product Phototransistors
    Peak Wavelength 850 nm Maximum On-State Collector Current 50 mA
    Collector- Emitter Voltage VCEO Max 20 V Collector-Emitter Breakdown Voltage 20 V
    Collector-Emitter Saturation Voltage 400 mV Dark Current 1 nA
    Pd - Power Dissipation 100 mW Minimum Operating Temperature - 40 C
    Maximum Operating Temperature + 100 C Series VEMT
    Qualification AEC-Q101 Half Intensity Angle Degrees 15 deg
    Light Current 6 mA Moisture Sensitive Yes
    Product Type Phototransistors Factory Pack Quantity 6000
    Subcategory Optical Detectors & Sensors Type Phototransistor
    Wavelength 850 nm

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    In Stock: 7,196

    Minimum Order: 1

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