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VEMT3700F-GS08 +BOM

Silicon NPN Phototransistor

VEMT3700F-GS08 General Description

Phototransistors 940nm Top View 2-LCC (J-Lead)

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Key Features

  • Long-term reliability tested
  • Durable product life expectancy ensured
  • Aging test protocols applied
  • Robustness and stability assured
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Application

  • Compact modules
  • Reliable switches
  • Accurate sensors
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Specifications

Product Category Phototransistors Product Phototransistors
Peak Wavelength 850 nm Maximum On-State Collector Current 50 mA
Collector- Emitter Voltage VCEO Max 70 V Collector-Emitter Breakdown Voltage 70 V
Collector-Emitter Saturation Voltage 150 mV Dark Current 200 nA
Rise Time 6 us Fall Time 2 us
Pd - Power Dissipation 100 mW Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 100 C Series VEMT
Half Intensity Angle Degrees 60 deg Light Current 500 uA
Moisture Sensitive Yes Product Type Phototransistors
Factory Pack Quantity 1500 Subcategory Optical Detectors & Sensors
Wavelength 940 nm Unit Weight 0.434810 oz

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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In Stock: 6,456

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $0.425 $0.42
10+ $0.345 $3.45
30+ $0.311 $9.33
100+ $0.269 $26.90
500+ $0.250 $125.00
1500+ $0.240 $360.00

The prices below are for reference only.

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