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See Technical Specifications

W972GG6JB25I +BOM

OEMs and CMs only

Manufacturer:

Winbond Electronics
Mfr.Part #:

W972GG6JB25I
Datasheet:

W972GG6JB25I Datasheet (PDF)
Programmabe:

Not Verified
Memory Type:

Volatile
Memory Format:

DRAM
Technology:

SDRAM - DDR2

W972GG6JB25I General Description

The W972GG6JB25I NAND flash memory chip from Samsung Electronics is a cutting-edge storage solution designed for a wide range of mobile devices and computing applications. With its 64 gigabit capacity and 34nm-class NAND technology, this chip offers high performance and reliability for demanding storage needs. Its single-level cell (SLC) architecture ensures fast read and write speeds, making it ideal for high-performance storage applications such as solid-state drives (SSDs). Additionally, the chip boasts a high data transfer rate of up to 200 megabytes per second, providing efficient and speedy access to stored data

Key Features

AUTO/SELF REFRESH

Specifications

Programmabe	Not Verified	Memory Type	Volatile
Memory Format	DRAM	Technology	SDRAM - DDR2
Memory Size	2Gbit	Memory Organization	128M x 16
Memory Interface	Parallel	Clock Frequency	200 MHz
Write Cycle Time - Word, Page	15ns	Access Time	57.5 ns
Voltage - Supply	1.7V ~ 1.9V	Operating Temperature	-40°C ~ 95°C (TC)
Mounting Type	Surface Mount	Base Product Number	W972GG6