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See Technical Specifications

ZDS020N60TB +BOM

High-power device for switching and amplification applications, ROHS compliant for safe usag

Manufacturer:

Rohm Semiconductor
Mfr.Part #:

ZDS020N60TB
Datasheet:

ZDS020N60TB Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

600 V
Current - Continuous Drain (Id) @ 25°C:

630mA (Tc)

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

ZDS020N60TB General Description

This MOSFET boasts a TO-220 package, offering superior thermal performance and easy mounting on heatsinks for enhanced power dissipation. Its incredibly low gate charge and capacitance make it ideal for applications requiring high-frequency switching, delivering consistent and reliable results even in the most demanding environments

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V	Current - Continuous Drain (Id) @ 25°C	630mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Vgs (Max)	±30V	Input Capacitance (Ciss) (Max) @ Vds	310 pF @ 10 V
Power Dissipation (Max)	2W (Tc)	Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount	Base Product Number	ZDS020