This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

ZTX653 +BOM

Compact 3-pin package NPN BJT with excellent thermal performance

Manufacturer:

Diodes Incorporated
Mfr.Part #:

ZTX653
Datasheet:

ZTX653 Datasheet (PDF)
Mounting Style:

Through Hole
Transistor Polarity:

NPN
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

100 V

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

ZTX653 General Description

Meet the ZTX653 NPN Bipolar Transistor from Diodes Inc., a reliable component with impressive specifications. Its 100V Collector Emitter Voltage and 2A Continuous Collector Current make it suitable for various applications, from amplification to switching tasks. With a Power Dissipation of 1W, this transistor can handle power efficiently without overheating. The Through Hole mounting style and 3-pin design offer convenience in installation and circuit connection. Plus, its Transition Frequency of 175Mhz enables high-speed operation for demanding tasks. And to top it off, the ZTX653 is RoHS compliant, ensuring that it meets strict environmental standards. Trust in the quality and performance of the Diodes Inc. ZTX653 for your electronics projects

Key Features

100 Volt VCEO
2 Amp continuous current
Low saturation voltage
Ptot=1 Watt

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	Through Hole
Transistor Polarity	NPN	Configuration	Single
Collector- Emitter Voltage VCEO Max	100 V	Collector- Base Voltage VCBO	120 V
Emitter- Base Voltage VEBO	5 V	Collector-Emitter Saturation Voltage	230 mV
Maximum DC Collector Current	2 A	Pd - Power Dissipation	1 W
Gain Bandwidth Product fT	175 MHz	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 200 C	Series	ZTX653
Continuous Collector Current	2 A	Height	4.01 mm
Length	4.77 mm	Product Type	BJTs - Bipolar Transistors
Factory Pack Quantity	4000	Subcategory	Transistors
Technology	Si	Width	2.41 mm
Unit Weight	0.016000 oz