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2MBI100N-120 +BOM

Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, M234, 7 PIN

email Email: [email protected]
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tel Tel: +852 95804164

Key Features

  • Square RBSOA
  • Low Saturation Voltage
  • Less Total Power Dissipation
  • Improved FWD Characteristic
  • Minimized Internal Stray Inductance
  • Overcurrent Limiting Function (4~5 Times Rated Current)

Specifications

Part Life Cycle Code Obsolete Pin Count 7
Reach Compliance Code ECCN Code EAR99
HTS Code 8541.29.00.95 Case Connection ISOLATED
Collector Current-Max (IC) 100 A Collector-Emitter Voltage-Max 1200 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND CUR LIMITING CIRCUIT Fall Time-Max (tf) 500 ns
JESD-30 Code R-XUFM-X7 Number of Elements 2
Number of Terminals 7 Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 1600 W Power Dissipation-Max (Abs) 800 W
Qualification Status Not Qualified Surface Mount NO
Terminal Form UNSPECIFIED Terminal Position UPPER
Transistor Application POWER CONTROL Transistor Element Material SILICON
Turn-off Time-Nom (toff) 850 ns Turn-on Time-Nom (ton) 650 ns
VCEsat-Max 3.3 V

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