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See Technical Specifications

2MBI300HJ-120-50 +BOM

Trans IGBT Module

Manufacturer:

FUJITSU
Mfr.Part #:

2MBI300HJ-120-50
Datasheet:

2MBI300HJ-120-50 Datasheet (PDF)
Part Life Cycle Code:

Active
ECCN Code:

EAR99
Case Connection:

ISOLATED
Collector Current-Max (IC):

370 A
EDA/CAD Models:

Request Free CAD Models for 2MBI300HJ-120-50

Email: [email protected]

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Tel: +852 95804164

Avaq Semiconductor offers the highly versatile and reliable 2MBI300HJ-120-50 driver, produced by FUJITSU. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the 2MBI300HJ-120-50.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Specifications

Part Life Cycle Code	Active	Reach Compliance Code
ECCN Code	EAR99	Case Connection	ISOLATED
Collector Current-Max (IC)	370 A	Collector-Emitter Voltage-Max	1200 V
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	Gate-Emitter Thr Voltage-Max	6.7 V
Gate-Emitter Voltage-Max	20 V	JESD-30 Code	R-XUFM-X7
Number of Elements	2	Number of Terminals	7
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	NOT SPECIFIED
Polarity/Channel Type	N-CHANNEL	Surface Mount	NO
Terminal Form	UNSPECIFIED	Terminal Position	UPPER
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Transistor Element Material	SILICON
Turn-off Time-Nom (toff)	350 ns	Turn-on Time-Nom (ton)	430 ns
VCEsat-Max	3.7 V