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2N1711 +BOM
With a gain of 8dB, this transistor is suitable for amplifying low-level signals
TO-5-3-
Manufacturer:
-
Mfr.Part #:
2N1711
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Datasheet:
-
Mounting Style:
Through Hole
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Transistor Polarity:
NPN
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Configuration:
Single
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Collector- Emitter Voltage VCEO Max:
50 V
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EDA/CAD Models:
Availability: 4348 PCS
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2N1711 General Description
Bipolar (BJT) Transistor NPN 50 V 500 mA 800 mW Through Hole TO-5AA
Specifications
Product Category | Bipolar Transistors - BJT | Mounting Style | Through Hole |
Transistor Polarity | NPN | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 50 V | Collector- Base Voltage VCBO | 75 V |
Emitter- Base Voltage VEBO | 7 V | Collector-Emitter Saturation Voltage | 500 mV |
Maximum DC Collector Current | 500 mA | Pd - Power Dissipation | 800 mW |
Gain Bandwidth Product fT | 100 MHz | Minimum Operating Temperature | - 65 C |
Maximum Operating Temperature | + 175 C | Series | 2N1711 |
Continuous Collector Current | 500 mA | DC Collector/Base Gain hfe Min | 40 |
DC Current Gain hFE Max | 300 | Height | 1.5 mm |
Length | 9.4 mm | Product Type | BJTs - Bipolar Transistors |
Factory Pack Quantity | 500 | Subcategory | Transistors |
Technology | Si | Width | 9.4 mm |
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In Stock: 4,348
Minimum Order: 1
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