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2N7371 +BOM

Bipolar (BJT) Transistor PNP - Darlington 100 V 12 A 100 W Through Hole TO-254

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Bipolar (BJT) Transistor PNP - Darlington 100 V 12 A 100 W Through Hole TO-254

Category	Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors	Series	Military, MIL-PRF-19500/623
Transistor Type	PNP - Darlington	Current - Collector (Ic) (Max)	12 A
Voltage - Collector Emitter Breakdown (Max)	100 V	Vce Saturation (Max) @ Ib, Ic	3V @ 120mA, 12A
Current - Collector Cutoff (Max)	1mA	DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 6A, 3V
Power - Max	100 W	Frequency - Transition	-
Operating Temperature	-65°C ~ 200°C (TJ)	Mounting Type	Through Hole
feature-type	PNP	feature-configuration	Single
feature-number-of-elements-per-chip	1	feature-maximum-collector-emitter-voltage-v	100
feature-maximum-collector-base-voltage-v	100	feature-maximum-emitter-base-voltage-v	5
feature-maximum-base-emitter-saturation-voltage-v	4@120mA@12A	feature-maximum-continuous-dc-collector-current-a	12
feature-minimum-dc-current-gain	1000@6A@3V\|150@12A@3V	feature-maximum-power-dissipation-mw	100000
feature-maximum-collector-emitter-saturation-voltage-v	3@120mA@12A	feature-packaging	Tray
feature-rad-hard		feature-pin-count	3
feature-cecc-qualified	No	feature-escc-qualified
feature-military	No	feature-aec-qualified	No
feature-auto-motive	No	feature-p-pap	No
feature-eccn-code	EAR99	feature-svhc-exceeds-threshold	No