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2N2905A +BOM

PNP Bipolar Junction Transistor 2N2905A

2N2905A General Description

Featuring a DC current gain (hFE) ranging from 100 to 300, the 2N2905A provides stable performance across a wide range of operating conditions. The maximum voltage ratings of 40V for the collector-emitter terminals and 60V for the base-emitter terminals ensure the transistor's durability and safety in different electrical setups. Additionally, its operating temperature range of -55°C to 150°C makes it suitable for use in harsh environments

2n2905a 2n2905a

Key Features

  • Silicon-based component
  • High-frequency performance
  • Efficient power usage
2n2905a 2n2905a

Application

  • For switching and amplifying
  • Essential for LED drivers
  • Used in voltage regulators
2n2905a 2n2905a

Specifications

Product Category Bipolar Transistors - BJT Mounting Style Through Hole
Transistor Polarity PNP Configuration Single
Collector- Emitter Voltage VCEO Max 60 V Collector- Base Voltage VCBO 60 V
Emitter- Base Voltage VEBO 5 V Collector-Emitter Saturation Voltage 1.6 V
Maximum DC Collector Current 600 mA Pd - Power Dissipation 800 mW
Minimum Operating Temperature - 65 C Maximum Operating Temperature + 200 C
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 1
Subcategory Transistors Technology Si
Unit Weight 0.032805 oz

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Ratings and Reviews

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L**m 12/24/2022

Perfect Transaction, Excellent communicator, Best packaging, Thankyou!

2
D
D**N 11/21/2020

Came for 18 days delivery ali-standard. All that is stated in stock, the description corresponds, one put-everything works. Photo no-all as in the description...

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