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2N7002BKV,115 +BOM

Reliable voltage control in small-footprint packag

2N7002BKV,115 General Description

With a compact form factor and high power handling capabilities, the 2N7002BKV,115 is ideal for applications requiring robust power management. Its efficient design ensures minimal power loss and maximum performance, making it a top choice for engineers seeking high-quality components

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Key Features

  • High efficiency performance
  • Compact package size
  • Easy integration with existing systems
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Application

  • Pressure sensor
  • Capacitive touch controller
  • Proximity sensor
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Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 350 mA Rds On - Drain-Source Resistance 1.6 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1.1 V
Qg - Gate Charge 600 pC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 440 mW
Channel Mode Enhancement Qualification AEC-Q101
Product Type MOSFET Factory Pack Quantity 4000
Subcategory MOSFETs Part # Aliases 934064288115
Unit Weight 0.000282 oz

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