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See Technical Specifications

2N7002HWX +BOM

N-Channel 60 V 310mA (Ta) 310mW (Ta) Surface Mount SOT-323

Manufacturer:

Nexperia
Mfr.Part #:

2N7002HWX
Datasheet:

2N7002HWX Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for 2N7002HWX

2N7002HWX General Description

The 2N7002HWX is a high-performance N-channel enhancement mode Field-Effect Transistor (FET) designed for various applications. It offers a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package, making it suitable for space-constrained designs. This FET utilizes Trench MOSFET technology, providing efficient and reliable performance in a wide range of electronic systems

Key Features

Highly efficient energy usage
Long lifespan ensured
Fully compatible with most systems
Excellent thermal management

Application

Speedy relay control
Efficient line driver
Small load switch

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	310 mA	Rds On - Drain-Source Resistance	1.6 Ohms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	2.4 V
Qg - Gate Charge	300 pC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	310 mW
Channel Mode	Enhancement	Configuration	Single
Fall Time	4 ns	Product Type	MOSFET
Rise Time	3 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Typical Turn-Off Delay Time	6 ns
Typical Turn-On Delay Time	2 ns	Part # Aliases	934661227115