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2SCR372P5T100Q +BOM

Bipolar Transistors - BJT NPN 120V Vceo 700mA Ic MPT3

  • Manufacturer:

    ROHM Semiconductor

  • Mfr.Part #:

    2SCR372P5T100Q

  • Datasheet:

    2SCR372P5T100Q Datasheet (PDF) pdf-icon

  • Transistor Type:

    NPN

  • Current - Collector (Ic) (Max):

    700 mA

  • Voltage - Collector Emitter Breakdown (Max):

    120 V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 50mA, 500mA

2SCR372P5T100Q General Description

Bipolar (BJT) Transistor NPN 120 V 700 mA 220MHz 500 mW Surface Mount MPT3

ROHM Semiconductor Inventory

Specifications

Category Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors Series -
Transistor Type NPN Current - Collector (Ic) (Max) 700 mA
Voltage - Collector Emitter Breakdown (Max) 120 V Vce Saturation (Max) @ Ib, Ic 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA, 5V
Power - Max 500 mW Frequency - Transition 220MHz
Operating Temperature 150°C (TJ) Mounting Type Surface Mount
Base Product Number 2SCR372 Product Category: Bipolar Transistors - BJT
Mounting Style: SMD/SMT Transistor Polarity: NPN
Configuration: Single Collector- Emitter Voltage VCEO Max: 120 V
Collector- Base Voltage VCBO: 120 V Emitter- Base Voltage VEBO: 6 V
Collector-Emitter Saturation Voltage: 100 mV Maximum DC Collector Current: 700 mA
Pd - Power Dissipation: 500 mW Gain Bandwidth Product fT: 220 MHz
Minimum Operating Temperature: - Maximum Operating Temperature: + 150 C
Series: 2SxR Packaging: MouseReel
Continuous Collector Current: 700 mA DC Collector/Base Gain hfe Min: 120
DC Current Gain hFE Max: 390 at 100 mA, 5 V Product Type: BJTs - Bipolar Transistors
Factory Pack Quantity: 1000 Subcategory: Transistors
Technology: Si Unit Weight: 0.086157 oz

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In Stock: 7,492

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $0.553 $0.55
200+ $0.215 $43.00
500+ $0.207 $103.50
1000+ $0.202 $202.00

The prices below are for reference only.