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2SD1898T100Q +BOM

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2SD1898T100Q General Description

Bipolar (BJT) Transistor NPN 80 V 1 A 100MHz 2 W Surface Mount MPT3

Key Features

1) High VCEO, VCEO=80V

2) High IC, IC=1A (DC)

3) Good hFE linearity

4) Low VCE (sat)

5) Complements the 2SB1260 / 2SB1241 / 2SB1181

Application

SWITCHING

Specifications

Product Category Bipolar Transistors - BJT Mounting Style SMD/SMT
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 80 V Collector- Base Voltage VCBO 120 V
Emitter- Base Voltage VEBO 5 V Collector-Emitter Saturation Voltage 150 mV
Maximum DC Collector Current 1 A Pd - Power Dissipation 500 mW
Gain Bandwidth Product fT 100 MHz Minimum Operating Temperature -
Maximum Operating Temperature + 150 C Series 2SD1898
Continuous Collector Current 1 A DC Collector/Base Gain hfe Min 82
DC Current Gain hFE Max 390 Height 1.5 mm
Length 4.5 mm Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 1000 Subcategory Transistors
Technology Si Width 2.5 mm
Unit Weight 0.004603 oz

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In Stock: 7,072

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $0.155 $0.16
10+ $0.126 $1.26
30+ $0.114 $3.42
100+ $0.099 $9.90
500+ $0.092 $46.00
1000+ $0.074 $74.00

The prices below are for reference only.

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