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2SK1019 +BOM

Metal-oxide semiconductor transistor for reliable operatio

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2SK1019 General Description

Power Field-Effect Transistor, 35A I(D), 450V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PL, 3 PIN

Key Features

  • High speed switching
  • Low on-resistance
  • No secondary breakdown
  • Low driving power
  • High voltage
  • VGSS = ±30V Guarantee

Specifications

Part Life Cycle Code Obsolete Pin Count 3
ECCN Code EAR99 HTS Code 8541.29.00.95
Case Connection ISOLATED Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 450 V Drain Current-Max (ID) 35 A
Drain-source On Resistance-Max 0.2 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Polarity/Channel Type N-CHANNEL Power Dissipation Ambient-Max 300 W
Pulsed Drain Current-Max (IDM) 100 A Qualification Status Not Qualified
Surface Mount NO Terminal Form THROUGH-HOLE
Terminal Position SINGLE Transistor Application SWITCHING
Transistor Element Material SILICON Turn-off Time-Max (toff) 1350 ns
Turn-on Time-Max (ton) 540 ns

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